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Optical Gain in GaInNAs and GaInNAsSb Quantum Wells

机译:GaInNAs和GaInNAsSb量子阱中的光学增益

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We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs (0.5%N) and GalnAs quantum well structures to compare their merits as laser gain media. The parameters describing the relations between peak gain and current provide only limited insight. From the analysis of absorption spectra we have determined the intrinsic properties of the structures, represented by the product [reduced density of states × matrix element × overlap integral], taking account of differences in operating wavelength, well width and confinement. We find only a small variation in this product across the samples. The GalnNAsSb structure has a low radiative recombination current due in part to its low photon energy and also to differences in conduction and valence band densities of states and less inhomogeneous broadening relative to GalnNAs. We speculate that Sb brings benefits as a surfactant producing more homogeneous wells so Sb may also be beneficial in structures at shorter wavelength. However, there is a large non radiative current in GalnNAsSb and achieving further reductions in the non-radiative current is the major challenge in taking advantage of the good gain potential of this system.
机译:我们已经测量了GalnNAsSb(3.3%N),GalnNAs(0.5%N)和GalnAs量子阱结构的吸收,增益和自发发射光谱,以比较它们作为激光增益介质的优点。描述峰值增益和电流之间关系的参数仅提供有限的见识。通过对吸收光谱的分析,我们确定了结构的固有特性,用乘积[状态密度降低×矩阵元素×重叠积分]表示,并考虑了工作波长,阱宽度和限制的差异。我们发现样品中该产品的变化很小。 GalnNAsSb结构的辐射复合电流低,部分原因是其光子能量低,并且还由于状态的导带和价带密度不同以及相对于GalnNAs的不均匀展宽较小。我们推测,Sb作为表面活性剂可产生更多均匀井,因此带来益处,因此Sb在较短波长的结构中也可能有益。但是,GalnNAsSb中存在很大的非辐射电流,要进一步降低非辐射电流,这是利用该系统良好的增益潜力的主要挑战。

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