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Interfacing Dielectric-Loaded Plasmonic and Silicon Photonic Waveguides: Theoretical Analysis and Experimental Demonstration

机译:介电加载的等离子和硅光子波导的接口:理论分析和实验演示

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摘要

A comprehensive theoretical analysis of end-fire coupling between dielectric-loaded surface plasmon polariton and rib/wire silicon-on-insulator (SOI) waveguides is presented. Simulations are based on the 3-D vector finite element method. The geometrical parameters of the interface are varied in order to identify the ones leading to optimum performance, i.e., maximum coupling efficiency. Fabrication tolerances about the optimum parameter values are also assessed. In addition, the effect of a longitudinal metallic stripe gap on coupling efficiency is quantified, since such gaps have been observed in fabricated structures. Finally, theoretical results are compared against insertion loss measurements, carried out for two distinct sets of samples comprising rib and wire SOI waveguides, respectively.
机译:提出了介电加载表面等离子体激元与肋/线绝缘体上硅(SOI)波导之间的端射耦合的综合理论分析。仿真基于3-D矢量有限元方法。接口的几何参数是变化的,以便识别导致最佳性能的参数,即最大耦合效率。还评估了有关最佳参数值的制造公差。另外,由于已经在制造的结构中观察到了这样的间隙,因此可以定量出纵向金属条间隙对耦合效率的影响。最后,将理论结果与插入损耗测量结果进行比较,插入损耗测量结果分别针对两组分别包括肋和线SOI波导的样本进行。

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