Measurement of carrier escape rates, exciton saturation intensity, and saturation density in electrically biased multiple-quantum-well modulators

摘要

In this paper, we detail the results of exciton saturation intensity measurements on strained InAsP/InP and InGaAs/GaAs multiple quantum well modulators designed for 1 /spl mu/m operation and under electrical bias as is required for device operation. Carrier escape times from the quantum well were also measured for both electrons and holes. These measurements allow the first experimental determination of the saturation density of the material under electrical bias. This density can also be calculated using a theoretical model proposed by Schmitt-Rink, et al. The experimentally measured density is in good agreement with this theoretical model.