Tunneling injection lasers: a new class of lasers with reduced hot carrier effects

摘要

In conventional quantum-well lasers, carriers are injected into the quantum wells with quite high energies. We have investigated quantum-well lasers in which electrons are injected into the quantum-well ground state through tunneling. The tunneling injection lasers are shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better modulation characteristics when compared to conventional lasers. The underlying physical principles behind the superior performance are also explored, and calculations and measurements of relaxation times in quantum wells have been made. Experimental results are presented for lasers made with a variety of material systems, InGaAs-GaAs-AlGaAs, InGaAs-GaAs-InGaAsP-InGaP, and InGaAs-InGaAsP-InP, for different applications. Both single quantum-well and multiple quantum-well tunneling injection lasers are demonstrated.