Room-temperature 2.2-Μm InAs-InGaAs-InP highly strainedmultiquantum-well lasers grown by gas-source molecular beam epitaxy

摘要

We report the fabrication and performances of 2.2-ΜmnInAs-InGaAs-InP highly strained multiple-quantum-well (MQW) lasers grownnby gas-source molecular beam epitaxy. The lasers operated at roomntemperature demonstrate a threshold current density of 900 A/cm2n a maximum external quantum efficiency of 28%, and a maximumnoutput power exceeding 60 mW per facet. To the best of our knowledge,nthis is the longest room-temperature emission wavelength reported fornlasers grown on InP substrates to date. The effect of strainncompensation on the quality of the InAs-InxGa1-xAsnMQW's was also studied using double crystal X-ray diffractometry andnphotoluminescence techniques. The experimental results reveal that therenis no significant difference on the epilayer quality of the samples withnstrain compensation. However, the group V stable surface growthncondition is indeed better than the group III stable surface growthncondition on the epilayer quality