Theoretical and experimental analysis of leakage current in InGaAsPBH lasers with p-n-p-n current blocking layers

摘要

The dependence of the leakage current in 1.3-Μm InGaAsP buriednheterostructure (BH) lasers with p-n-p-n current blocking layers on wellnnumber, mesa width, and carrier density has been analyzed using antwo-dimensional device simulator and compared with thenelectroluminescence (EL) emitted from InP layers. The analysis of thenminority carrier flow reveals that the electron current flowing throughnthe p-n-p-n current blocking layers is the dominant component of thenleakage current. The measured EL intensity has two peaks at both sidesnof the n-blocking layer apart from the active layer. The EL intensityndecreases with increasing well number and carrier density of thenp-blocking layer, and increases with increasing mesa width. Thesenresults are consistent with the simulations