Characterization of a distributed feedback laser withair/semiconductor gratings embedded by the wafer fusion technique

摘要

Wafer fusion between patterned or structured wafers is very usefulnin the construction of new optical materials and/or devices that havensubmicrometer-order structures inside semiconductors. In order toninvestigate the feasibility of wafer fusion for this purpose, andistributed feedback (DFB) laser wafer developed which hasnair/semiconductor gratings that are embedded using the wafer fusionntechnique. In this paper, the characteristics of the newly developed DFBnlaser and the coupling coefficient are investigated.nSingle-longitudinal-mode oscillation at 1.28 Μm is achieved undernpulsed conditions at room temperature with a low threshold currentndensity of 1.3 kA/cm2, and the coupling coefficient isnestimated to he approximately 100 cm-1. In addition,nhigh-power surface emission (over 6 mW) is demonstrated due to the largendifference between the refractive index of air and that of InP. Thesenresults indicate the feasibility of applying wafer fusion techniques tonform submicrometer structures in semiconductors, and several othernapplications are expected