The authors analyze the feasibility of laser action in erbium-doped silicon devices. The recent experimental results on spontaneous light emission at 1.54 /spl mu/m from erbium doped silicon diodes and theoretical calculation on Bragg grating technology are used to evaluate the best scenario performances. The effects of processes-induced errors on the threshold conditions are taken into account. They show that laser action in the Er:Si system is feasible.
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机译:作者分析了掺action硅器件中激光作用的可行性。最近关于掺experimental硅二极管以1.54 / spl mu / m自发发光的实验结果以及布拉格光栅技术的理论计算被用来评估最佳场景性能。考虑了过程引起的误差对阈值条件的影响。他们表明在Er:Si系统中进行激光作用是可行的。
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