In-well ambipolar diffusion in room-temperature InGaAsP multiplequantum wells

摘要

Three-pulse transient amplitude grating experiments were performednusing picosecond pulses at 1.525 Μm on room-temperature InGaAsPnmultiple quantum wells using a periodically poled LiNbO3n(PPLN) optical parametric oscillator. An ambipolar diffusion coefficientnof 7.2 cm2/s was measured from the diffraction efficiencyndecay rates. We deduce the presence of alloy scattering or an increasenin interface scattering when comparing these results with those ofnsimilar experiments on GaAs-AlGaAs multiple quantum wells