Active semiconductor-based grating waveguide structures

摘要

Under certain conditions, a high-finesse resonance phenomenon cannoccur in a grating waveguide structure (GWS). By varying thesenconditions, a shift in the resonance wavelength can be achieved.nSpecifically, utilizing the high finesse property of the GWS, smallnchanges in the refractive index can result in a tuning range larger thannthe resonance bandwidth. Here, we consider different electric-field andncharge carrier mechanisms that can affect the refractive index innsemiconductor materials, and exploit them in order to control thenrefractive index change and, therefore, the resonance wavelength in thenGWS. The predicted results are verified experimentally with an activenGWS formed with semiconductor materials and operated in a reversenvoltage configuration