Three types of 2-D lateral magnetoresistive sensors with P~+ -implant confinement

摘要

The paper presents three types of 2-D magnetic sensors fabricated by an industrial 0.8 μm CMOS process. They are designed to measure the horizontal magnetic component B. and the vertical magnetic component B_y, simultaneously. The devices with p~+ -implant confinement have been investigated experimentally. According to experimental results, the magnitudes of the cross-coupling noises are proportional to the device size. Both the enlarged device size and the narrowed device conductive thickness with p~+ -implant confinement have higher sensitivity. The measured absolute voltage sensitivity S_A, the absolute current sensitivity S_I, and the supply-current-related sensitivity S_RI are 0.741V/T, 493.7μA/T and 439.4V/AT, respectively.