MAGNETORESISTIVE EFFECT ELEMENT, MAGNETORESISTIVE EFFECT TYPE MAGNETIC SENSOR, MAGNETORESISTIVE EFFECT TYPE MAGNETIC HEAD, AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To increase magnetoresistive variation amount in a magnetoresistive effect element, magnetoresistive effect type magnetic sensor, magnetoresistive effect type magnetic head, and magnetic memory. ;SOLUTION: A laminated structure 10 is constituted where at least a free layer 4 which rotates by magnetizing according to an external magnetic field, a fixed layer 2, an antiferromagnetic layer 1 for fixing magnetization of the fixed layer, and a non-magnetic layer 3 interposed between the free layer 4 and the fixed layer 2, are laminated. Related to the laminating structure part 10, a sense current flows approximately in the laminating direction; and the laminating structure is provided with an energization regulating layer S distributing micro energized regions across the path of sense current for higher element resistance, resulting in enhanced magnetoresistive variation.;COPYRIGHT: (C)2003,JPO