pMOS transistors, intrinsic mobility and their surface degradation parameters at cryogenic temperatures

摘要

The intrinsic low-field mobility mu /sub 0/ and the mobility surface-degradation constants theta /sub 0/ and theta /sub B/ in varying channel length pMOS transistors at cryogenic temperatures are presented. It was found the mu /sub 0/ increased from 180 cm/sup 2//V s at 300 K to 1260 cm/sup 2//V at 77 K, and that theta /sub 0/ also increased with 0.10 at 300 K to 0.49 at 77 K. These two parameters were extracted using an analytical model for the pMOS devices in its ohmic mode of operation that is very suitable for use in circuit simulation programs such as SPICE.