New nonlinear large-signal DC bipolar junction transistor model

摘要

A new DC nonlinear large-signal model for the bipolar junction transistor is described, together with the procedures for estimating its parameters. The main advantage of the new model over existing models is its very simple parameter estimation procedures. This produces high accuracy with very minor parameter optimisation effort. A further important feature of the model is that it is expandable so that its complexity can be altered to suit the required application.