Determination of the RF-noise source parameters inAlInAs/GaInAs-HEMT heterostructures based on measured noise temperaturedependence against electric field

摘要

The noise temperature dependence on the electric field in annAlInAs/GaInAs-HEMT heterostructure has been measured. It was found thatnthe dependence of the noise temperature on the electric field innGaAs-MESFETs and in AlInAs/GaInAs-HEMTs is remarkably different. Fornthis reason a different model must be used for AlInAs/GaInAs-HEMTs.nBased on the measured noise temperature dependence on the electricnfield, an analytic noise model for the AlInAs/GaInAs HEMT has beenndeveloped. The noise source parameters were calculated and compared withnextracted noise source parameters from noise measurements