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High-swing, high-drive CMOS buffer

机译:高摆幅,高驱动CMOS缓冲器

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摘要

The advent of analogue and hybrid VLSI circuits has created newnrequirements for the design of many previously known building blocks.nFor example, implementation of cascaded multilayer analogue/hybridnneural networks requires output drivers that can charge the large numbernof interconnecting lines, and remain stable in the presence of largencapacitive loads. A CMOS high dynamic range, high-drive buffer suitablenfor driving large capacitive loads is presented in this paper. Annarea-efficient output stage has been used, with which a rail-to-railndrive capability into a 5000 pF load at 160 kHz is achieved. The circuitnoccupies only 110 mils2 in a 3 Μm technology. The outputnrange is rail to rail for R>10 kΩ. The buffer is capable ofndriving resistive loads down to 300 Ω with acceptable THD
机译:模拟和混合VLSI电路的出现对许多以前已知的构建模块的设计提出了新的要求。n例如,级联多层模拟/混合神经网络的实现要求输出驱动器可以为大量互连线路充电,并在存在时保持稳定大电容负载。本文提出了一种适用于驱动大容性负载的CMOS高动态范围高驱动缓冲器。使用了高效的Annarea输出级,通过该输出级,可以在160 kHz的频率下实现5000pF负载的轨到轨驱动能力。在3毫米技术中,电路仅占用110 mils2。 R> 10kΩ时,输出范围为轨到轨。该缓冲器能够以可接受的THD推导低至300Ω的电阻负载

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