Electromechanical evaluation of a bondless pressure contact IGBT

摘要

The paper presents some of the electromechanical design strategiesnused in the implementation of a completely bond free, pressure contactednIGBT with integral anti-parallel diode. The mechanical, thermal andnelectrical properties of a pressure contacted IGBT are compared to thosenexhibited by substrate mounted devices. These differences indicate thatnthe bondless pressure contact IGBT offers the potential of highernreliability and other exploitable advantages in certain applications