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Activation Energy for Electromigration in Aluminum Films Alloyed with Copper

机译:铜合金铝膜中电迁移的活化能

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The rate of electromigration in thin films of aluminum and aluminum alloyed with copper has been determined by measuring the changes in resistance of stripes subjected to a current density of 4×106 A/cm2. At temperatures in the range from 100 to 200°C the activation energy for electromigration has been found to have the same value for both the pure and the copper-alloyed samples, namely, 0.6 eV. However, the rate of migration is much smaller, by a factor as large as 100, in the copper-bearing samples. These results are discussed in terms of grain boundary diffusion and the effect of alloying additions on diffusion mechanisms.
机译:铝和铝合金与铜的薄膜中的电迁移速率已通过测量承受4×106 A / cm2电流密度的条带的电阻变化来确定。在100到200°C的温度范围内,已发现用于电迁移的活化能对于纯样品和铜合金样品具有相同的值,即0.6 eV。但是,在含铜样品中,迁移速率小得多,高达100倍。从晶界扩散和合金添加对扩散机理的影响来讨论这些结果。

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