Electron Beam Direct Writing Technologies for the HL-800D

摘要

Both single-layer-resist processes with a sensitivity of over 3 μC/cm~2 and a pattern data communications system with high communications bandwidth have been developed in support of the fast pattern writing speed of the HL-800D electron-beam direct writing system. These technologies have been successfully applied to the development and manufacturing of application specific integrated circuits (ASICs) at the Device Development Center of Hitachi, Ltd.