Comparison of hydrogen isotope retention and irradiation damage behaviors in tungsten and SS-316 with simultaneous C~+-D_2~+ implantation

摘要

Behaviors of hydrogen isotope retention and damages in tungsten and SS-316 with simultaneous C~+-D_2~+ implantation were compared to those with only D_2~+ implantation using X-ray photoelectron spectroscopy (XPS), Thermal desorption spectroscopy (TDS), glow discharge-optical emission spectroscopy (GD-OES) and Transmission electron microscopy (TEM). The total D retention for SS-316 with only D_2~+ implantation was about 45% as large as that for tungsten. The D retention for simultaneous C~+-D_2~+ implanted tungsten and SS-316 clearly increased as a factor of 1.7, which is almost the same among these samples. The density of dislocation loops was enhanced by the simultaneous O-D_2~+ implantation, indicating the D trapping site would be produced by C~+ implantation. As for the D desorption temperature, small shift toward lower temperature side was found for SS-316 compared to tungsten, indicating the D trapping energy by dislocation loops and grain boundary for SS-316 is lower than that for tungsten.