Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO_3 multilayer films constructed resistive switching memory devices

摘要

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)n/SCO/Ti (n = 0, 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti (n = 0) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti (n = 1) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.