Resistive switching effect enhanced by light irradiation in C/BaTiO_3C memory structure

摘要

The Ta/[C/BaTiO3/C]/Si device was obtained. The resistive switching (RS) behaviors of the Ta/[C/BaTiO3/C]/Si device are studied in the dark and under white-light illumination with various power densities. The results show that the device displays bipolar RS effect, which can be modulated by the white light. And the RS memory device shows biggish resistance ratio, which is more than 10(5) under white-light irradiation with a power density of 40 mW/cm(2), and the ratio can stabilize at nearly 71 cycles. This work is helpful for the optical control non-volatile memory.