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Enhanced superconductivity in hole-doped Nb2PdS5

机译:掺杂空穴的Nb2PdS5中的超导性增强

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摘要

We synthesized a series of Nb2Pd1-xRuxS5 polycrystalline samples by a solid-state reaction method and systematically investigated the Ru-doping effect on superconductivity by transport and magnetic measurements. It is found that superconductivity is enhanced with Ru doping and is quite robust upon disorder. Hall coefficient measurements indicate that the charge transport is dominated by hole-type charge carriers similar to the case of Ir doping, suggesting multi-band superconductivity. Upon Ru or Ir doping, H-c2/T-c exhibits a significant enhancement, exceeding the Pauli paramagnetic limit value by a factor of approximately 4. A comparison of T-c and the upper critical field (H-c2) amongst the different doping elements on Pd site, reveals a significant role of spin-orbit coupling.
机译:我们通过固态反应方法合成了一系列Nb2Pd1-xRuxS5多晶样品,并通过传输和磁测量系统研究了Ru掺杂对超导性的影响。发现通过Ru掺杂增强了超导电性,并且在无序情况下超导电性非常强。霍尔系数测量表明,与Ir掺杂的情况类似,电荷传输受空穴型电荷载流子的支配,这表明多带超导性。在Ru或Ir掺杂后,H-c2 / Tc表现出显着增强,比Pauli顺磁极限值高出约4倍。Td和Pd上不同掺杂元素之间的上临界场(H-c2)的比较位置揭示了自旋轨道耦合的重要作用。

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  • 来源
    《Frontiers of physics》 |2017年第5期|127402.1-127402.6|共6页
  • 作者单位

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, Zhejiang Calif Int NanoSyst Inst, Hangzhou 310058, Zhejiang, Peoples R China;

    Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China|Zhejiang Univ, Zhejiang Calif Int NanoSyst Inst, Hangzhou 310058, Zhejiang, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    superconductivity; hole-doping; upper critical field; spin-orbit coupling; phase diagram;

    机译:超导空穴掺杂上临界场自旋耦合相位图;

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