Novel types of photonic band crystal high power and high brightness semiconductor lasers

摘要

A novel type of high power edge-emitting semiconductor laser (SL) with extended vertical photonic band crystal (PBC) waveguide was reviewed. Simulations predict narrow beam divergence, resulting from the thick PBC waveguide, to be independent of realistic variations of the growth parameters. Narrow ridge lasers fabricated along the simulations indeed demonstrate superior output power, narrow beam divergence, circular beam profile, excellent beam quality and very low astigmatism. Efficient fiber coupling decisive for most applications was thus eased. Stability of the laser under a wide range of operating temperature was demonstrated. Ultrashort pulses with few ps of duration at GHz repetition rates were generated by passively mode locking the lasers.