High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

Rosales R.; Kalosha V.P.; Posilovic K.; Miah M.J.; Bimberg D.; Pohl J.; Weyers M.

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High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

机译：被动锁模方式下的高亮度光子带状晶体半导体激光器

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摘要

High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm sr are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

机译：介绍了处于被动锁模状态的高亮度光子带晶体激光器。在5 GHz的设备上可获得峰值功率为3 W，峰值亮度约为180 MW cm sr的光脉冲，在垂直和水平方向上均显示15 ps的脉冲和非常低的光束发散度。

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来源
《Applied Physics Letters》 |2014年第16期|1-4|共4页
作者
Rosales R.; Kalosha V.P.; Posilovic K.; Miah M.J.; Bimberg D.; Pohl J.; Weyers M.;
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作者单位

Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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专利

1. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime [J] . R. Rosales, V. P. Kalosha, K. Posilovic, Applied Physics Letters . 2014,第16期

机译：被动锁模方式下的高亮度光子带状晶体半导体激光器
2. Novel types of photonic band crystal high power and high brightness semiconductor lasers [J] . Md. Jarez MIAH, Vladimir P. KALOSHA, Ricardo ROSALES, Frontiers of optoelectronics in China . 2016,第2期

机译：新型光子带晶体高功率高亮度半导体激光器
3. Novel types of photonic band crystal high power and high brightness semiconductor lasers [J] . Md. Jarez MIAH1, Vladimir P. KALOSHA1, Ricardo ROSALES1, 中国光电子学前沿：英文版 . 2016,第002期

机译：新型光子带晶体高功率高亮度半导体激光器
4. High Repetition Rate Monolithic Passively Mode-Locked Semiconductor Quantum-Dot Laser: Investigation of the Locking Regimes and the RF Linewidth [C] . Fabien Kefelian, Shane ODonoghue, Maria Teresa Todaro, Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference . 2007

机译：高重复率单片被动模式锁定半导体量子点激光器：调查锁定方案和射频线宽
5. Development of Epitaxial Strategies towards the Growth of Novel Semiconductor Saturable Absorber Mirrors (SESAMs) for Passively Mode-Locked Optically Pumped Vertical-External-Cavity Surface-Emitting Lasers (VECSELs) [D] . Addamane, Sadhvikas J. 2017

机译：外延战略的发展，以发展用于无源锁模光泵浦垂直外腔表面发射激光器（VECSEL）的新型半导体可饱和吸收镜（SESAM）
6. Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser [O] . Alvaro Moscoso-Mártir, Juliana Müller, Elmira Islamova, -1

机译：具有SOA和半导体锁模激光器的硅光子WDM收发器的校准链路预算
7. Mode-Locking Lasers: Mode-Locking of All-Fiber Lasers Operating at Both Anomalous and Normal Dispersion Regimes in the C- and L-Bands Using Thin Film of 2D Perovskite Crystallites (Laser Photonics Rev. 12(11)/2018) [O] . Seongjin Hong, Ferdinand Lédée, Jaedeok Park, 2018

机译：模式锁定激光器：使用2D Perovskite微晶的薄膜在C-和L频带中运行的全纤维激光器的模式锁定（激光光子版Rev.12（11）/ 2018）
8. Optically Pumped Far-Infrared Lasers Based on Photonic Band Gap Crystals [R] . Everitt, H. O. 1998

机译：基于光子带隙晶体的光泵浦远红外激光器

High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

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