MMICs and Mixed-Signal ICs Based on Ⅲ/Ⅴ Technology for Highest Frequencies and Data Rates

摘要

During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave monolithic integrated circuits (MMICs) and modules for application in active and passive high-resolution imaging systems operating beyond 200 GHz as well as mixed-signal monolithic ICs intended for use in 100 Gbit/s optical communication systems (Ethernet). The MMICs are based on an advanced metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. The mixed-signal ICs are manufactured using a state-of-the-art InP double heterojunction bipolar transistor (DHBT) technology. Examples of high-performance circuits from both technologies are presented in this paper.