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首页> 外文期刊>Environment protection engineering >ADSORPTIVE PERFORMANCE OF MCM-41 TOWARDS Hg(II) IN WATER. ADSORPTION AND DESORPTION STUDIES
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ADSORPTIVE PERFORMANCE OF MCM-41 TOWARDS Hg(II) IN WATER. ADSORPTION AND DESORPTION STUDIES

机译:MCM-41对水中Hg(II)的吸附性能。吸附与去吸附研究

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摘要

MCM-41 mesoporous material was prepared under a standard conditions by using cetyltrimethylammonium bromide as a structure-directing agent and tetraethyl orthosilicate as silica source from the liquid phase at 80 degrees C. Powder X-ray diffraction and scanning electron microscopy used to characterize the product, showed that the MCM-41 material had an average particle size of 110 nm. The synthesized material was used to investigate the effects of acidity, adsorption time, the concentration of Hg2+, adsorbent dosage and temperature on the adsorption of Hg2+. The results showed that the optimal adsorptive conditions were: pH 5.0, m(MCM-41):mHg(2+) 6.67, temperature 20 degrees C and contact adsorption time 60 min, for the initial Hg2+ concentration of 1.0 mg/cm(3). The maximum adsorptive amount of Hg2+ was 56.48 mg Hg2+/g MCM-41. The results of the desorptive effect of three desorption agents such as HCl, HNO3 and HAc showed that the best desorbent was HCl at the concentration of 0.10 mol/dm(3). The highest desorption efficiency was 77.21% for the desorption time 2 h.
机译:MCM-41介孔材料是在标准条件下,以十六烷基三甲基溴化铵为结构导向剂,以原硅酸四乙酯为二氧化硅源,于80℃从液相中制备的。粉末X射线衍射和扫描电子显微镜用于表征产品,表明MCM-41材料的平均粒径为110nm。合成的材料用于研究酸度,吸附时间,Hg2 +的浓度,吸附剂量和温度对Hg2 +吸附的影响。结果表明,对于初始Hg2 +浓度为1.0 mg / cm(3),最佳吸附条件为:pH 5.0,m(MCM-41):mHg(2+)6.67,温度20摄氏度和接触吸附时间60分钟。 )。 Hg2 +的最大吸附量为56.48 mg Hg2 + / g MCM-41。三种解吸剂如HCl,HNO3和HAc的吸附作用结果表明,最好的解吸剂为HCl,浓度为0.10 mol / dm(3)。在2 h的脱附时间内,最高的脱附效率为77.21%。

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  • 来源
    《Environment protection engineering》 |2016年第1期|5-15|共11页
  • 作者单位

    Changchun Univ Sci & Technol, Res Ctr Nanotechnol, South Campus,7186 Weixing Rd, Changchun 130022, Jilin Province, Peoples R China;

    Changchun Univ Sci & Technol, Res Ctr Nanotechnol, South Campus,7186 Weixing Rd, Changchun 130022, Jilin Province, Peoples R China;

    Changchun Univ Sci & Technol, Res Ctr Nanotechnol, South Campus,7186 Weixing Rd, Changchun 130022, Jilin Province, Peoples R China;

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