Bistability in inhomogeneously pumped quantum well laser diodes

摘要

Hysteresis has been observed in the light-current characteristics of inhomogeneously pumped GaAs/AlGaAs laser diodes with both MQW and bulk GaAs active layers. Bistable action was observed in both types of device, at switching speeds suggesting that electronic mechanisms were responsible for saturation of the absorption in the passive region of each structure. In the MQW case, the wavelength of operation of the device suggested saturation of the excitonic absorption.