Two-dimensional finite-element analysis of planar dielectric waveguides with embossed isotropic n-type semiconductor material

摘要

Propagation characteristics and modal field distributions are obtained for an embossed rectangular waveguide employing isotropic n-type semiconductor material. A finite-element formulation utilising eight-noded quadrilateral elements was used to derive the dispersion spectrum with spurious solutions rigorously eliminated. The canonical model analysed here employs surface plasmons in a doped semiconducting medium as interface guided waves in the near millimetre wave range. Such structures have potential use in the guidance and control of millimetre waves and have applications in the design of planar quasi-optical integrated devices.