Microwave characterisation and modelling of silicon carbide power MESFETS: towards a nonlinear model

摘要

SiC power MESFETs are studied for applications to power amplification in the microwave domain. A small-signal model is explained. It provides the intrinsic bias-dependent parameters of the devices, such as G/sub m/, C/sub gs/, C/sub ds/, C/sub gd/, and the current gain cut-off frequency f/sub T/. It is shown that f/sub T/ and G/sub m/ decrease with the drain to source bias V/sub DS/, because of self-heating effects. The model also includes temperature dependence and is in good agreement with experiments. This is a first step to non-linear modelling of SiC MESFETs.