首页> 外文期刊>Emerging and Selected Topics in Power Electronics, IEEE Journal of >A High Density 250 src='/images/tex/21629.gif' alt='^{circ}{rm C}'> Junction Temperature SiC Power Module Development
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A High Density 250 src='/images/tex/21629.gif' alt='^{circ}{rm C}'> Junction Temperature SiC Power Module Development

机译:高密度250 src =“ / images / tex / 21629.gif” alt =“ ^ {circ} {rm C}”> 结温SiC功率模块开发

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摘要

A high temperature wirebond-packaged phase-leg power module was designed, developed, and tested. Details of the layout, gate drive, and cooling system designs are described. Continuous power tests confirmed that the designed high-density power module can be successfully operated with 250 °C junction temperature. The power module was further utilized in an all-SiC rectifier system that achieves a 2.78 kW/lb power density.
机译:设计,开发和测试了高温引线键合封装的相脚功率模块。描述了布局,浇口驱动和冷却系统设计的详细信息。连续的电源测试证实,设计的高密度电源模块可以在250°C的结温下成功运行。该功率模块还用于全SiC整流器系统中,可实现2.78 kW / lb的功率密度。

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