机译:重复UIS应力下P-GaN HEMT的电参数降解的研究
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Southeast Univ Sch Elect Sci & Engn Natl ASIC Syst Engn Res Ctr Nanjing 210096 Peoples R China;
Stress; Logic gates; HEMTs; MODFETs; Gallium nitride; Degradation; Voltage measurement; Parameter shifts; p-GaN high-electron-mobility transistor (HEMT); reliability; repetitive unclamped-inductive-switching (UIS);
机译:基于低频噪声的重复未扫描电感切换应力下的电子模式对电子模式降低和恢复的电气参数劣化和回收
机译:反复瞬态过电流对高压p-GaN HEMT长期可靠性的研究
机译:关于反向偏置应力AlGaN / GaN HEMT中电参数退化的不同原因
机译:重复ESD应力下600V SOI-LIGBT的电参数劣化研究
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:不同修复方法对常关P-GaN HEMT电性能的影响
机译:P-GaN门常关下锚杆近均匀菌株对电气特性的模拟