An Accurate Calorimetric Loss Measurement Method for SiC MOSFETs

摘要

An accurate measurement of conduction and switching losses in the power semiconductor devices is necessary in order to design and evaluate the thermal management system of modern converter systems. Conventionally, electrical measurement methods, such as the double-pulse tests (DPTs), are used for measuring the switching losses. However, with the advent of wide-bandgap (WBG) devices that have fast switching transients, it is rather difficult to capture the waveforms accurately during switching transitions, and consequently, the measurement of switching loss becomes inaccurate. In addition, the measurement of switching waveforms depends on the voltage and current probes, as well as the oscilloscope used for the measurement, which makes this method prone to errors. This necessitates the use of measurement methods, which can provide much higher accuracy than the existing conventional electrical methods. Calorimetric methods are based on comparatively slow temperature measurements and do not rely on the measurements of fast switching transitions of voltages and currents, thus eliminating the demand for measuring fast switching transitions. This paper presents an accurate calorimetric method for measuring the device losses, which can be used to determine individual loss components accurately (conduction, turn-on, and turn-off losses). In addition to the turn-on and turn-off losses, this method can evaluate the charging and discharging losses of the device. The novelty of the method lies in the fact that a single setup can be used to measure all possible losses that can occur in a device during converter operation. The calorimetric test setup is described, and a novel modulation scheme is introduced, which enables the segregation of the individual losses. The experimental test setup is built and the method is verified by measuring the losses of a 900-V, 23-A Wolfspeed C3M0120090D SiC MOSFET.