A Physics-Based Lumped-Charge Model for SiC MPS Diode Implemented in PSPICE

摘要

This paper presents a physical lumped-charge model for an SiC merged p-i-n Schottky (MPS) diode. According to the MPS chip configuration, this paper divides the model into two parts: the bipolar subcircuit and the unipolar subcircuit. Both the two parts are modeled by the lumped-charge approach. The proposed physics-based model is also temperature dependent. The model is implemented into the PSPICE simulator in the form of an equivalent circuit. For the characterization of surge current condition that will cause chip temperature changes significantly, an accurate lumped thermal model of the module is established by the structural parameters extraction with a scanning electron microscope. Finally, the developed model is verified by Cree CAS300M12BM2 SiC power module with a 2000-A surge current through the electro-thermal co-simulation. Besides, a test setup is built up with an ultrafast infrared (IR) camera to validate the electro-thermal model in the circuit-level simulation.