High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM

摘要

This paper proposes a dual (1R/1W) port spin-orbit torque magnetic random access memory (1R/1W SOT-MRAM) for energy efficient on-chip cache applications. Our proposed dual port memory can alleviate the impact of write latency on system performance by supporting simultaneous read and write accesses. The spin-orbit device leverages the high spin current injection efficiency of spin Hall metal to achieve low critical switching current to program a magnetic tunnel junction. The low write current reduces the write power consumption, and the size of the access transistors, leading to higher integration density. Furthermore, the decoupled read and write current paths of the spin-orbit device improves oxide barrier reliability, because the write current does not flow through the oxide barrier. Device, circuit, and system level co-simulations show that a 1R/1W SOT-MRAM based L2 cache can improve the performance and energy-efficiency of the computing systems compared to SRAM and standard STT-MRAM based L2 caches.