机译:基于
Dipartimento di Ingegneria Enzo Ferrari, Università di Modena e Reggio Emilia, Modena, Italy;
Compact model; RRAM; high resistive state (HRS); high-; dielectric; low resistive state (LRS); oxygen vacancy; physics-based model; random telegraph noise (RTN); resistive switching; trap-assisted tunneling (TAT);
机译:
机译:
机译:迈向微观飞行:300次
机译:
机译:基于HFO2的RERAM的表征与MIM类存储装置的物理学型号的开发
机译:A 265 V <公式甲型键=“内联”>