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GaAs on Si-the ultimate wafer?

机译:硅上的砷化镓-最终的晶圆?

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摘要

There are two basic reasons why growing GaAs on Si could be worthwhile. First, it could provide a low-cost, robust source of GaAs wafers. Growing single crystals of GaAs is relatively difficult, and GaAs wafers are generally smaller and more expensive than their silicon counterparts. They are also more fragile and prone to breakage. Secondly, it would allow high-speed digital Si, high-frequency analogue GaAs and the interchip connections to be integrated on a single substrate. The author discusses the defect densities of the GaAs layer due to lattice mismatch and then describes how the problem can be overcome by using strained layer superlattices grown by MOVPE.
机译:在硅上生长GaAs值得的两个基本原因。首先,它可以提供低成本,强大的GaAs晶片来源。 GaAs的单晶生长相对困难,GaAs晶圆通常比硅晶圆更小且更昂贵。它们也更脆弱并且易于断裂。其次,它将允许将高速数字Si,高频模拟GaAs和芯片间连接集成在单个基板上。作者讨论了由于晶格失配导致的GaAs层的缺陷密度,然后描述了如何使用MOVPE生长的应变层超晶格来解决该问题。

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