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机译:GaAs / AlGaAs量子阱中利用量子约束斯塔克效应的矩阵寻址4 * 4空间光调制器
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK;
III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; matrix algebra; optical modulation; optical waveguide components; semiconductor devices; semiconductor quantum wells; 837 nm; 838.1 nm; GaAs-AlGaAs; array configuration; array performance; electrical circuit; matrix-addressed GaAs quantum well modulator; modulation depth; optimum working wavelength; quantum confined Stark effect; spatial light modulator;
机译:Quantum被局限于inAs / GaAs二维电子气体耦合的INAS量子点的光致发光的温度依赖性
机译:Quantum受限于INAS / GaAs二维电子气体耦合的INAS量子点的光致发光的温度依赖性(Vol 53,PG 484,2019)
机译:GaAs / AlGaAs纳米线量子阱管器件中的量子受限斯塔克效应:探测激子定位
机译:LP MOCVD生长的GaAs / AlGaAs多个量子阱中的量子限制鲜明位移
机译:斯塔克几何光折射多量子阱空间光调制器。
机译:通过圆偏振光激发的自旋光电流研究无掺杂InGaAs / AlGaAs多量子阱中的自旋输运
机译:错误到:量子狭窄的insumsum圆点光致发光与Algaas / GaAs二维电子气体的光致发光的温度依赖性
机译:三重耦合InGaas / Gaas / alGaas量子阱红外光电探测器中量子限制斯塔克效应的观测。