Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region

摘要

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R/sub s/, C and L associated with the device structure.