机译:使用新型反射式Y耦合器组件的InGaAsP 400 * 200μm有源交叉点开关,工作在1.5μm范围
Dept. of Eng., Cambridge Univ., UK;
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical couplers; optical switches; semiconductor switches; 1.5 micron; 200 micron; 400 micron; InGaAsP; active crosspoint switch; bar state operation; channel absorption/gain; cross state operation; fabrication; matrix switch; operating characteristics; optical communication; reflective Y-coupler components; unity facet to facet gain;
机译:使用1.3μm的控制光脉冲和1.3μm的半导体光放大器对1.5μm的有源双折射光纤环路滤波器进行皮秒级光学开关
机译:应变层(1.5 / spl mu / m)InP / InGaAsP激光光电开关(LOES)
机译:使用商业InGaAsP 1.3 / spl mu / m激光二极管以1.5 / spl mu / m的自相关和超快光学阈值
机译:In / sub 1-x / Ga / sub x / As / sub y /(P / sub 1-y /)-InGaAsP多量子阱中的1.5 / spl mu / m的全光偏振切换
机译:卟啉铜(II)和铁(III)卟啉的合成MU-咪唑并MU-OXO双核配合物作为模型活性部位的细胞色素C氧化酶
机译:白介素5诱导葡聚糖抗IgD抗体和白介素4激活的B细胞中S mu-Sγ1 DNA重排:Ig类转换的三成分模型
机译:InGaAsP多量子阱中1.5微米处的偏振转换和诱导双折射