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Polarization switching and induced birefringence in InGaAsP multiple quantum wells at 1.5 mu m

机译：InGaAsP多量子阱中1.5微米处的偏振转换和诱导双折射

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Marshall D; Mazilu M; Miller A; Button C C;
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年度 2002
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正文语种 {"code":"en","name":"English","id":9}
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1. Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)/InGaAsP multiple quantum wells [J] . J T Hyland, G T Kennedy, A Miller Semiconductor Science and Technology . 1999,第3期

机译：InGaAs（P）/ InGaAsP多量子阱中1.52微米处的自旋弛豫和所有光偏振转换
2. InGaAsP 400*200 mu m active crosspoint switch operating at 1.5 mu m using novel reflective Y-coupler components [J] . White I.H., Watts J.J.S. Electronics Letters . 1990,第10期

机译：使用新型反射式Y耦合器组件的InGaAsP 400 * 200μm有源交叉点开关，工作在1.5μm范围
3. A new polarization-insensitive 1.55-/spl mu/m InGaAsP-InGaAsP multiquantum-well electroabsorption modulator using a strain-compensating layer [J] . Ku-ho Chung, Jong-in Shim IEEE Journal of Quantum Electronics . 1999,第5期

机译：使用应变补偿层的新型偏振不敏感的1.55- / spl mu / m InGaAsP-InGaAsP多量子阱电吸收调制器
4. All-optical polarisation switching at 1.5 /spl mu/m in In/sub 1-x/Ga/sub x/As/sub y/(P/sub 1-y/)-InGaAsP multiple quantum wells [C] . Hyland, J.T., Kennedy, . 1999

机译：In / sub 1-x / Ga / sub x / As / sub y /（P / sub 1-y /）-InGaAsP多量子阱中的1.5 / spl mu / m的全光偏振切换
5. All-optical polarization switching techniques based on the coherent many-body interactions and the virtual excitation of spin-polarized carriers in semiconductor quantum wells. [D] . Gansen, Eric John. 2004

机译：基于相干多体相互作用和半导体量子阱中自旋极化的载流子的虚拟激发的全光极化切换技术。
6. Altered birefringence of peripapillary retinal nerve fiber layer in multiple sclerosis measured by polarization sensitive optical coherence tomography [O] . Hong Jiang, Wan Chen, Silvia Delgado, 2018

机译：偏振敏感光学相干断层扫描测量多发性硬化症中视网膜周围神经纤维层双折射的变化
7. Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures [O] . Jin S R, Sweeney S J, Ahmad C N, 2004

机译：在低温和室温下高压下测量的1.3μmInGaAsP和1.5μmInGaAs量子阱激光器的辐射和俄歇复合
8. Long Wavelength (Wavelength 1.5 micrometers) Native-Oxide-Defined InAlAs-InP-InGaAsP Quantum Well Heterostructure Laser Diodes [R] . Caracci, S. J., Krames, M. R., Holonyak, N. 1994

机译：长波长（波长1.5微米）自然氧化物定义的Inalas-Inp-InGaasp量子阱异质结构激光二极管

Polarization switching and induced birefringence in InGaAsP multiple quantum wells at 1.5 mu m

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