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机译:InP HEMT上的AlInAs / GaInAs用于高功率附加效率微波放大器的低电源电压操作
Hughes Res. Labs., Malibu, CA, USA;
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; solid-state microwave circuits; solid-state microwave devices; 2.5 to 3 V; 200 to 300 mW; 67 percent; AlInAs-GaInAs-InP; C-band; HEMTs; InP; LV operation; high power-added efficiency; low power supply voltage operation; power amplifier;
机译:2-GHZ三级AlInAs-GaInAs-InP HEMT MMIC低噪声放大器
机译:V波段高效率大功率AlInAs / GaInAs / InP HEMT
机译:InP电源HEMT上的20 GHz高效AlInAs-GaInAs
机译:InP HEMT低噪声MMIC放大器上的AlInAs / GaInAs
机译:使用AlGaN / GaN HEMT的大功率,宽带微波F类功率放大器的设计
机译:宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
机译:一个43 GHz AlInAs / GaInAs / InP HEMT网格振荡器
机译:用于微波和mm-211波功率放大器的高效率,低电压,复合半导体器件