Comparison of Al and TiPtAu metallisations on a GaAs MESFET with GeMoW ohmic contacts

摘要

Metal-semiconductor field effect transistors (MESFETs) were compared using either TiPtAu or Al as both gate metal and interconnect metal to GeMoW source/drain contacts. The GeMoW/Al MESFET demonstrated superior I-V characteristics following thermal cycling at 500 degrees C. These results demonstrate a complete device and interconnect metallisation scheme capable of withstanding thermal stressing at 500 degrees C.