GaAs MESFETs with nonalloyed ohmic contacts: technology and performance

摘要

GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (x.t.l.) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts.