Long wavelength quantum well lasers with InGaAs/InP superlattice optical confinement and barrier layers

摘要

Long wavelength, separate confinement heterostructure, ridge waveguide laser diodes using InGaAs/InP short period superlattices and InGaAs quantum wells have been demonstrated. The short period superlattices replace the more conventional quaternary alloys. These lasers have threshold current densities of 1.9 kA/cm/sup 2/, device efficiencies of 0.16 mW/mA and a characteristic temperature T/sub 0/ of 56 K.