Elimination or minimisation of optoelectronic crosstalk between photodiodes and electronic devices in OEIC on Si

摘要

The optoelectronic crosstalk between photodiodes and electronic devices is observed and investigated in OEICs based on silicon. Results show that the phenomenon is closely related to the diffusion of minority carriers, generated by photon absorption. The crosstalk can be eliminated or minimised by either placing the electronic devices far from the photodiode, or by enclosing them with a reverse-biased guard ring diode.