Fabrication of 200 nm field effect transistor by X-ray lithography with a laser-plasma X-ray source

摘要

The critical dimensions required for 1 Gbit semiconductor technology will be beyond the capabilities of optical lithography. The laser-generated plasma X-ray source provides an alternative to synchrotron radiation for lithography, providing a quasi point source of radiation at /spl sim/1 nm wavelength. The 180 nm lithography required for 1 Gbit has been demonstrated by exposure of a novel commercial resist using a laboratory prototype plasma X-ray source. A MOSFET with 200 nm gate length has been produced using the new technology in mix-and-match with conventional methods. The device shows good electrical characteristics, demonstrating the promise of this approach.