Visible-blind ultraviolet photodetectors based on GaN p-n junctions

摘要

Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported. These detectors have an abrupt long wavelength cutoff wavelength at /spl sim/370 nm and responsivity values as high as 0.09 A/W at 360 nm. The rise and fall times were measured to be 300 /spl mu/s at 325 nm.