Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

摘要

An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70 mu A was achieved with 5 mu m-diameter core device. The proposed structure provides strong electrical and optical confinements. Also a reduction in nonradiative recombination and an improvement in the thermal resistance can be expected.