Characteristics of GaAs MISFET devices using low-temperature-grown Al/sub 0.3/Ga/sub 0.7/As as gate insulator

摘要

Al/sub 0.3/Ga/sub 0.7/As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. An LT-Al/sub 0.3/Ga/sub 0.7/As MISFET, having a gate length of 2 /spl mu/m, exhibited a transconductance of 161 mS/mm, an I/sub DSS/ of 320 mA/mm and a maximum drain voltage of 44.7 V, resulting in an I-V product of 1.65 W/mm; it displayed improved frequency dispersion characteristics over that of an LT GaAs MISFET.